Samsung and Toshiba lead 2012 NAND flash market

Virtium strategic partners Samsung and Toshiba retained their NAND flash market share leadership positions for 2012 according to a February 5, 2013 article on DigiTimes.com.  Samsung came in at number one with $7.29B and Toshiba stayed at number two at $5.32B.  The article goes on to quote DRAMeXchange as stating Micron ($2.65B) surpassed Hynix ($2.26B) to jump into the number three position.

You can read the full article on DigiTimes.com.

In a related article in PCMag.com, market research firm IHS iSuppli projects that cellphones of all types will displace flash cards as the number one consumer of NAND flash in 2013.

Samsung and Hynix will be CapEx cautious in 2013

Looks like industrial embedded memory prices may be flat to on the rise for the next few quarters as the DRAM manufacturers try to stem the tide of $21B in losses over the last five years (reference: Bloomberg.com).  The information below was copied from DigiTimes.com IC and Memory daily news, February 1, 2013:

Samsung, Hynix cautious about 2013 capex plans

“Memory chip vendors Samsung Electronics and SK Hynix have both taken a cautious approach to planning for capital expenditure (capex) in 2013, implying that the pair is looking to maintain stable profits instead of pursuing bigger maret share, according to industry observers.

Samsung’s capex for its semiconductor business in 2012 is estimated at about US$13 billion, and its spending will likely reduce to US$12 billion in 2013, the observers said.

Fellow memory chip firm Hynix is expected to lower its capex in 2013, the observers indicated. Hynix’ capex for 2012 is estimated at approximately KRW3.8 trillion (US$3.5 billion).

Samsung’s semiconductor business consists of the memory and system LSI divisions. The vendor also manufactures display panels, and system products such as smartphones and TVs.

Samsung has disclosed that its capital spending for 2013 will be similar to that allocated for 2012. “The weakening global economic recovery and looming market uncertainties are anticipated to weigh on plans for investment and performance this year,” the company said in a statement.

Hynix has not disclosed its capex plan for 2013.

In other news, Samsung and Hynix have both moved to shift their DRAM business focus to chips used in mobile devices from commodity chips for PCs.

Samsung indicated that rising sales of mobile DRAM, which yields higher profits, will make a positive contribution to its overall DRAM business growth in 2013.

According to Hynix, sales of mobile DRAM chips accounted for 40% of its overall DRAM revenues in the fourth quarter of 2012. The proportion is set to climb further in 2013.”

Virtium to Introduce Industrial DDR4 Memory Modules

Virtium will start rolling out our full line of DDR4 memory modules in Q2 2013.  The first available products will be 4GB and 8GB registered and unbuffered ECC DIMM modules.  Those will be followed shortly by 4GB ECC SODIMM and 4GB and 8GB VLP ECC UDIMM products.  All initial modules will be based on 4Gb DDR4 components in a x8 configuration.

It is important to note that there are a few significant differences when designing with DDR4 compared to DDR3/3L modules.  The table below outlines these differences:

*available from Virtium Q2 2013

DDR4 DIMM connectors are available from FCI.  Other socket vendors to consider are TE and Molex.

For more information on Virtium’s DDR4 solutions or to review our product roadmap, please contact your Virtium sales associate or ddr4@virtium.com.

New NVM Technology Update

I am constantly asked by our OEM customers about what non-volatile storage technology  is going to win once NAND flash can no longer scale.  We’re in the long product lifecycle business and concerns over the fate of NAND flash and their associated controllers are a real concern for networking and industrial embedded systems OEMs.  As of this post, there are still no clear winners but memory suppliers are working hard on several fronts.

 

 

Here are a few EETimes.com updates on the latest alternative technologies to floating gate NAND.

An excellent summary from Brian Fuller, November 19, 2012:
ISSCC preview: Revving ReRAMs, boosting memory bandwidth.
The chart above is from this article.

From Brian Bailey, November 15, 2012:
3D NAND Flash is Coming

From Peter Clark, November 15, 2012:
Micron Phase Change Memory (PCM) to Skip a Node

In a related November 26, 2012 story from DigiTimes.com :

“NAND flash chipmakers are gearing up for transition to a newer 16nm process in 2013, according to industry sources. Nonetheless, the schedule for mass production on the node will likely be pushed back due to yield challenges, the sources indicated.

Compared to their previous transition to 19/20nm processes, mass production yields on 16nm will be more difficult to achieve, the sources said. NAND flash chipmakers are expected to go through a period of time to improve the process yields to a satisfactory level, the sources believe.”

Happy Thanksgiving!